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1 / 18 asb inc. ? sales@asb .co.kr ? tel: +82 - 42 - 528 - 722 5 february 2017 as x415 250 ~ 40 00 mhz mmic amplifier 4 (supply voltage = device voltage , t a = +25 ? c, z 0 = 50 ? ) parameters units typical frequency mhz 900 2000 2000 2000 2600 gain db 20 .0 14.5 14.3 14 .0 11.5 s11 db - 14 - 7 - 7 - 7 - 7 s22 db - 13 - 11 - 11 - 11 - 10 output ip3 1) dbm 42.5 46 .0 42 .0 40 .0 37 .0 noise figure db 4.2 5.6 4.6 4.1 4.2 output p1db dbm 29 .0 29 .0 27 .0 26.5 29 .0 current ma 155 185 155 123 155 device voltage v + 5 .00 + 5.3 0 + 5 .00 + 4.75 + 5 .00 1) oip3 is measured with two tones at an output power of +8 dbm/to ne @ + 5.3 0 v, +6 dbm/tone @ + 5 .00 v , +4 dbm/tone @ + 4.75 v separated by 1 mhz. parameters units min typ max testing frequency mhz 2000 gain db 13.5 14.3 s11 db - 9 s22 db - 11 output ip3 dbm 40 42 noise figure db 4.6 output p1db dbm 26 .5 27 .0 current ma 140 155 170 device voltage v + 5 parameters rating operating case temperature - 40 to ? 85 ? c storage temperature - 40 to ? 150 ? c device voltage +6 v operating junction temper a ture + 150 ? c input rf power ( c ontinuous) * + 22 dbm thermal resistance 24 ? c /w * please find the max. input power data from http://www.asb.co.kr/pdf/maximum_input_power_analysis.pdf feature s description typical perfor m ance absolute maximum ratings ? ? ? ? ? ? the ASX415, a power amplifier mmic, has a high linea r ity , high gain, and high efficiency over a wide range of frequency, being sui t able for use in both receiver and transmitter of telecommu nication sy s- tems up to 4 ghz. the amplifier is available in a sot89 package and passes through the stringent dc, rf, and reliability tests. application circuit ? if ( 433 ~ 444 mhz ) ? cdma ? satellite phone ? wcdma ? wimax ? lte (2300 ~ 2700 mhz) product specifications ASX415 package style: sot89 pin configuration pin no. function 1 rf in 2 gnd 3 rf out / bias
2 / 18 asb inc. ? sales@asb .co.kr ? tel: +82 - 42 - 528 - 722 5 february 2017 as x415 250 ~ 40 00 mhz mmic amplifier pin no. function 1 rf in 2 gnd 3 rf out / bias mounting recommendation ( i n mm) outline drawing note : 1. the number and size of ground via holes in a circuit board is critical for thermal and rf grounding consi d erations. 2. we recommend that the ground vi a holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better rf and thermal performance, as shown in the drawing at the left side. symbols dimensions (in m m) min nom max a 1.40 1.50 1.60 l 0.89 1.04 1.20 b 0.36 0.42 0.48 b1 0.41 0.47 0.53 c 0.38 0.40 0.43 d 4.40 4.50 4.60 d1 1.40 1.60 1.75 e 3.64 --- 4.25 e1 2.40 2.50 2.60 e1 2.90 3.00 3.10 h 0.35 0.40 0.45 s 0.65 0.75 0.85 e 1.40 1.50 1.60 as x415 pxxxx lot no. part no. esd classification hbm class 1b voltage level: 500 v ~ 1000 v mm class a voltage level: <200 v caution: esd - sensitive device! moisture sensitivity level (msl) level 3 at 260 ? c reflow esd classification & moisture sensitivity level
3 / 18 asb inc. ? sales@asb .co.kr ? tel: +82 - 42 - 528 - 722 5 february 2017 as x415 250 ~ 40 00 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +5 dbm/tone sep a- rated by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) sc hematic s - parameters & k - factor application circuit frequency (mhz) 433 444 magnitude s21 (db) 22 .0 22 .0 magnitude s11 (db) - 18 - 18 magnitude s22 (db) - 16 - 15 output p1db (dbm) 28 28 output ip3 1) (dbm) 35 37 noise figure (db) 6.5 6 .0 device voltage (v) + 5 + 5 current (ma) 155 155 if 433 ~ 444 mhz +5 v c1=100 pf c2=100 pf vs=5 v rf in rf out c4=100pf c5=1 ? f ASX415 d1=5.6v zener diode c3=12 pf l1=82 nh (coil inductor) l2=12 nh l3=8.2 nh l4=8.2 nh 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) 300 350 400 450 500 550 600 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 300 350 400 450 500 550 600 -30 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 300 350 400 450 500 550 600 0 5 10 15 20 25 gain (db) frequency (mhz)
4 / 18 asb inc. ? sales@asb .co.kr ? tel: +82 - 42 - 528 - 722 5 february 2017 as x415 250 ~ 40 00 mhz mmic amplifier 1) oip3 is measured with two tones at an ou tput power of +7 dbm/tone @ + 5.3 0 v , +6 dbm/tone @ + 5 .00 v , +4 dbm/tone @ + 4.75 v separated by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor cdma rx 824 ~ 849 mhz +5.3 0 v , +5 .00 v , +4.75 v frequency (mhz) 824 ~ 849 magnitude s21 (db) 20.3 20 .0 19.8 magnitude s11 (db) - 15 - 15 - 14 magnitude s22 (db) - 12 - 12 - 12 output p1db (dbm) 28.5 28.5 28 .0 output ip3 1) (dbm) 45 41 35 noise figure (db) 5.2 4.4 4.2 de vice voltage (v) + 5.3 0 + 5 .00 + 4.75 current (ma) 185 155 123 application circuit 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) 600 700 800 900 1000 1100 1200 0 5 10 15 20 25 gain (db) frequency (mhz) -40 o c 25 o c 85 o c 600 700 800 900 1000 1100 1200 -30 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) -40 o c 25 o c 85 o c 600 700 800 900 1000 1100 1200 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) -40 o c 25 o c 85 o c c1=100 pf c2=100 pf vcc=5 v rf in rf out c5=100pf c6=1 ? f ASX415 d1=5.6v zener diode c3=7.5 pf c4=4.7 pf l1=68 nh (coil inductor) l2=8.2 nh l3=3.3 nh
5 / 18 asb inc. ? sales@asb .co.kr ? tel: +82 - 42 - 528 - 722 5 february 2017 as x415 250 ~ 40 00 mhz mmic amplifier noise figure vs. temperature current vs. temperature p1db vs. temperature mhz) gain vs. temperatur e output ip3 vs . tone power (frequency = 835 mhz) mhz) -60 -40 -20 0 20 40 60 80 100 80 100 120 140 160 180 200 current (ma) temperature ( o c) frequency = 835 mhz -60 -40 -20 0 20 40 60 80 100 14 16 18 20 22 24 26 gain (db) temperature ( o c) frequency = 835 mhz -60 -40 -20 0 20 40 60 80 100 0 1 2 3 4 5 6 7 8 noise figure (db) temperature ( o c) frequency = 835 mhz -60 -40 -20 0 20 40 60 80 100 20 22 24 26 28 30 32 34 36 p1db (dbm) temperature ( o c) frequency = 835 mhz 4 5 6 7 8 9 10 11 12 13 14 0 10 20 30 40 50 60 70 output ip3 (dbm) p out per tone (dbm) -40 o c 25 o c 85 o c
6 / 18 asb inc. ? sales@asb .co.kr ? tel: +82 - 42 - 528 - 722 5 february 2017 as x415 250 ~ 40 00 mhz mmic amplifier 1) oip3 is measured with two tones at an output powe r of +5 dbm/tone @ + 5.3 0 v , +6 dbm/tone @ + 5 .00 v , +10 dbm/tone @ + 4.75 v separated by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit cdma tx 869 ~ 894 mhz +5.3 0 v , +5 .00 v , +4.75 v frequency (mhz) 869 ~ 894 magnitude s21 (db) 20.1 20 .0 19.7 magnitude s11 (db) - 14 - 14 - 12 magnitude s22 (db) - 13 - 13 - 13 output p1db (db m) 29 .0 29 .0 27.5 output ip3 1) (dbm) 45 .0 42.5 39 .0 noise figure (db) 5.2 4.2 4.2 device voltage (v) + 5.3 0 + 5 .00 + 4.75 current (ma) 185 155 123 600 700 800 900 1000 1100 1200 0 5 10 15 20 25 gain (db) frequency (mhz) 600 700 800 900 1000 1100 1200 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 600 700 800 900 1000 1100 1200 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) c1=100 pf c2=100 pf vcc=5 v rf in rf out c5=100pf c6=1 ? f ASX415 d1=5.6v zener diode c3=8 pf c4=4.7 pf l1=68 nh (coil inductor) l2=6.8 nh l3=3.3 nh
7 / 18 asb inc. ? sales@asb .co.kr ? tel: +82 - 42 - 528 - 722 5 february 2017 as x415 250 ~ 40 00 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +6 dbm/tone sep a- rated by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 1626 ~ 1661 magnitude s21 (db) 16.5 magnitude s11 (db) - 14 magnitude s22 (db) - 18 output p1db (dbm) 29 output ip3 1) (dbm) 37.5 noise figure (db) 3.8 device voltage (v) + 5 current (ma) 155 satellite phone 1626 ~ 1661 mhz +5 v 1300 1400 1500 1600 1700 1800 1900 0 5 10 15 20 gain (db) frequency (mhz) 1300 1400 1500 1600 1700 1800 1900 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 1300 1400 1500 1600 1700 1800 1900 -30 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) c1=100 pf c2=100 pf vcc=5 v rf in rf out c5=100pf c6=1 ? f ASX415 d1=5.6v zener diode c3=3 pf c4=1.5 pf l1=68 nh (coil inductor) l2=2.2 nh l3=1.5 nh
8 / 18 asb inc. ? sales@asb .co.kr ? tel: +82 - 42 - 528 - 722 5 february 2017 as x415 250 ~ 40 00 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +8 dbm/tone @ + 5.3 0 v , +6 dbm/tone @ + 5 .00 v , +4 dbm/tone @ + 4.75 v separated by 1 mhz. board layo ut ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor ( + 5 v) application circuit frequency (mhz) 1920 ~ 1980 magnitude s21 (db) 14.5 14.3 14 .0 magnitude s11 (db) - 7 - 7 - 7 magnitude s22 (db) - 11 - 11 - 11 output p1db (dbm) 29 .0 27 .0 26.5 output ip3 1) (dbm) 46 42 40 noise figure (db) 5.6 4.6 4.1 device voltage (v) + 5.3 0 + 5 .00 + 4.75 current (ma) 185 155 123 wcdma rx 1920 ~ 1980 mhz +5.3 0 v , +5 .00 v , +4.75 v 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) 1700 1800 1900 2000 2100 2200 0 5 10 15 20 gain (db) frequency (mhz) -40 o c 25 o c 85 o c 1700 1800 1900 2000 2100 2200 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) -40 o c 25 o c 85 o c 1700 1800 1900 2000 2100 2200 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) -40 o c 25 o c 85 o c c1=68 pf c2=68 pf vcc rf in rf out c5=100pf c6=1 ? f ASX415 d1=5.6v zener diode c3=2.7 pf c4=1.8 pf l1=18 nh 1.5 mm 1.5 mm
9 / 18 asb inc. ? sales@asb .co.kr ? tel: +82 - 42 - 528 - 722 5 february 2017 as x415 250 ~ 40 00 mhz mmic amplifier output ip3 vs. tone power (frequency = 1950 mhz) gain vs. temperature current vs. temperature output ip3 vs. tone power (frequency = 1950 mhz) p1db vs. temperature 0 2 4 6 8 10 12 14 16 18 20 22 15 20 25 30 35 40 45 50 55 60 output ip3 (dbm) p out per tone (dbm) 5 v 4.75 v -60 -40 -20 0 20 40 60 80 100 80 100 120 140 160 180 200 current (ma) temperature ( o c) frequency = 1950 mhz -60 -40 -20 0 20 40 60 80 100 8 10 12 14 16 18 20 gain (db) temperature ( o c) frequency = 1950 mhz -60 -40 -20 0 20 40 60 80 100 16 20 24 28 32 36 p1db (dbm) temperature ( o c) frequency = 1950 mhz 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 0 10 20 30 40 50 60 70 output ip3 (dbm) p out per tone (dbm) -40 o c 25 o c 85 o c
10 / 18 asb inc. ? sales@asb .co.kr ? tel: +82 - 42 - 528 - 722 5 february 2017 as x415 250 ~ 40 00 mhz mmic amplifier +5 v, 155 ma + 4.75 v, 123 ma ? test source: wcdma 4fa (3gpp 3.4 12 - 00), test model1 w/64 dpch, par = 13 db @ 0.01 % probability on ccdf, 1950 mhz, 5 mhz offset ? test source: wcdma 1fa (3gp p 3.4 12 - 00), test model1 w/64 dpch, ? test source: is - 95, 9ch. forward 30 khz meas bw, 1950 mhz, par = 13 db @ 0.01 % probability on ccdf, 1950 mhz, 5 mhz offset 750 khz offset wcdma aclr C 4fa wcdma aclr C 1fa cdma acpr C 1fa 10 11 12 13 14 15 16 17 -60 -55 -50 -45 -40 -35 aclr (dbc) output channel power (dbm) 5 v 4.75 v 11 12 13 14 15 16 17 18 19 20 21 22 23 -75 -70 -65 -60 -55 -50 -45 -40 -35 aclr (dbc) output channel power (dbm) 5 v 4.75 v 11 12 13 14 15 16 17 18 19 20 21 22 23 -75 -70 -65 -60 -55 -50 -45 -40 -35 acpr (dbc) output channel power (dbm) 5 v 4.75 v
11 / 18 asb inc. ? sales@asb .co.kr ? tel: +82 - 42 - 528 - 722 5 february 2017 as x415 250 ~ 40 00 mhz mmic amplifier 1) test source : lte_fdd_test model 3.1, bw: 10 mhz & 20 mhz, test frequency: 1850 mhz 2) test source : lte_fdd_test model 3.1, bw: 20 mhz, test frequency: 1850 mhz lte aclr C 10 mhz & 20 mhz lte aclr C 20 mhz 0 4 8 12 16 20 output power (dbm) -70 -65 -60 -55 -50 -45 -40 aclr (dbc) 20 mhz bw 10 mhz bw
12 / 18 asb inc. ? sales@asb .co.kr ? tel: +82 - 42 - 528 - 722 5 february 2017 as x415 250 ~ 40 00 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +8 dbm/tone @ + 5.3 0 v , +6 dbm/tone @ + 5 .00 v , +4 dbm/tone @ + 4.75 v separated by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameter s & k - factor ( + 5 v) application circuit frequency (mhz) 2110 ~ 2170 magnitude s21 (db) 13.2 13 .0 12.8 magnitude s11 (db) - 6 - 6 - 6 magnitude s22 (db) - 12 - 12 - 12 output p1db (dbm) 28.5 27.5 27 .0 output ip3 1) (dbm) 46 .0 40.5 39.5 noise figure (db) 6.0 4.9 4.5 device voltage (v) + 5.3 0 + 5 .00 + 4.75 current (ma) 185 155 123 wcdma tx 2110 ~ 2170 mhz +5.3 0 v , +5 .00 v , +4.75 v 1900 2000 2100 2200 2300 2400 0 5 10 15 20 gain (db) frequency (mhz) 1900 2000 2100 2200 2300 2400 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 1900 2000 2100 2200 2300 2400 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) c1=68 pf c2=68 pf vcc rf in rf out c5=100pf c6=1 ? f ASX415 d1=5.6v zener diode c3=2.2 pf c4=1.5 pf l1=15 nh (coil inductor) 0.5 mm 1 mm
13 / 18 asb inc. ? sales@asb .co.kr ? tel: +82 - 42 - 528 - 722 5 february 2017 as x415 250 ~ 40 00 mhz mmic amplifier +5 v, 155 ma + 4.75 v, 123 ma ? test source: wcdma 4fa (3gpp 3.4 12 - 00), test model1 w/64 dpch, par = 13 db @ 0.01 % probabilit y on ccdf wcdma aclr output ip3 vs. tone power (frequency = 2140 mhz) 0 2 4 6 8 10 12 14 16 18 20 22 15 20 25 30 35 40 45 50 55 60 output ip3 (dbm) p out per tone (dbm) 5 v 4.75 v
14 / 18 asb inc. ? sales@asb .co.kr ? tel: +82 - 42 - 528 - 722 5 february 2017 as x415 250 ~ 40 00 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +6 dbm/tone @ + 5 v , +4 dbm/tone @ + 4.75 v separated by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 2500 ~ 2700 2500 ~ 2700 magnitude s21 (db) 11.5 11.5 magnitude s11 (db) - 7 - 7 magnitude s22 (db) - 10 - 10 output p1db (dbm) 29 .0 28.5 output ip3 1) (dbm) 37 36 noise figure (db) 4.2 3.9 device voltage (v) + 5 .00 + 4.75 current (ma) 155 123 wimax 2500 ~ 2700 mhz +5 .00 v , + 4.75 v c1=68 pf c2=68 pf vcc=5 v / 4.75 v rf in rf out c5=100pf c6=1 ? f ASX415 d1=5.6v zener diode c3=2 pf c4=1.5 pf l1=15 nh (coil inductor) 1.5 mm 2000 2200 2400 2600 2800 3000 3200 0 5 10 15 20 gain (db) frequency (mhz) 2000 2200 2400 2600 2800 3000 3200 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 2000 2200 2400 2600 2800 3000 3200 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz)
15 / 18 asb inc. ? sales@asb .co.kr ? tel: +82 - 42 - 528 - 722 5 february 2017 as x415 250 ~ 40 00 mhz mmic amplifier +5 v, 155 ma + 4.75 v, 123 ma ? test source: wcdma 4fa (3gpp 3.4 12 - 00), test model1 w/64 dpch, par = 13 db @ 0.01 % probability on ccdf wcdma aclr
16 / 18 asb inc. ? sales@asb .co.kr ? tel: +82 - 42 - 528 - 722 5 february 2017 as x415 250 ~ 40 00 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +14 dbm/tone @ + 5 v , +13 dbm/tone @ + 4.75 v separated by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz ) 3500 3500 magnitude s21 (db) 9 .0 9 .0 magnitude s11 (db) - 7 - 7 magnitude s22 (db) - 11 - 11 output p1db (dbm) 25 .0 24.5 output ip3 1) (dbm) 42 40 noise figure (db) 5.4 4.8 device voltage (v) + 5 .00 + 4.75 current (ma) 155 123 w imax 3500 mhz +5 .00 v , + 4.75 v c1=68 pf c2=68 pf vcc=5 v / 4.75 v rf in rf out c5=100pf c6=1 ? f ASX415 d1=5.6v zener diode c3=1 pf c4=0.75 pf l1=15 nh (coil inductor) 3000 3200 3400 3600 3800 4000 4200 0 2 4 6 8 10 12 gain (db) frequency (mhz) 3000 3200 3400 3600 3800 4000 4200 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 3000 3200 3400 3600 3800 4000 4200 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz)
17 / 18 asb inc. ? sales@asb .co.kr ? tel: +82 - 42 - 528 - 722 5 february 2017 as x415 250 ~ 40 00 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +6 dbm/tone separated by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 2300 2500 2700 magnitude s21 (db) 12.9 13.1 12.8 magnitude s11 (db) - 5 - 8 - 18 magnitude s22 (db) - 18 - 18 - 18 output p1db (dbm) 27.5 output ip3 1) (dbm) 36 noise figure (db) 5.1 device voltage (v) + 5 current (ma) 155 lte 2300 ~ 2700 mhz gain flatness < 0.5 db +5 v 2000 2200 2400 2600 2800 3000 0 5 10 15 20 gain (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) 2000 2200 2400 2600 2800 3000 -30 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 2000 2200 2400 2600 2800 3000 -30 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) c1=68 pf c2=68 pf vs = 5v rf in rf out c5=100pf c6=1 ? f ASX415 d1=5.6v zener diode c3=1.8 pf c4=1.2 pf l1=15 nh (coil inductor) 3.5 mm 3.5 mm
18 / 18 asb inc. ? sales@asb .co.kr ? tel: +82 - 42 - 528 - 722 5 february 2017 as x415 250 ~ 40 00 mhz mmic amplifier copyright ? 2009 - 2017 asb inc. all righ ts reserved. datasheet subject to change without notice. asb assumes no re- sponsibility for any errors which may appear in this datasheet. no part of the datasheet may be copied or reproduced in any form or by any means without the prior written consent of asb. 20~40 sec 2 60 ? c 200 ? c 150 ? c 60~180 sec ramp - up (3 ? c/sec) ramp - down (6 ? c/sec) recommended soldering reflow profile

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